Vidwan-ID : 62482



  • Dr Satinder Kumar Sharma

  • Professor
  • Indian Institute of Technology Mandi
Publications 2000 - 2024

Publications

  • 128
    Journal Articles
  • 1
    Book Chapter
  • 34
    Conference
    Proceedings
  • 3
    Review
  • 8
    Projects
  • 6
  • 2
  • 2
  • 147

Citations / H-Index

1733 Citations
23 h-index
2002 Citations

Altmetrics

1
6
16
45
3

Co-author Network


Expertise

Electrical and Electronic Engineering

VLSI Technology, Synthesis and characterization of Multiple thickness gate oxides for SOC system, High-k gate dielectric stacks charge trapping for CMOS Technology and ions irradiated scaled MOSFET for space application, VLSI design for digital and analog circuits, reconfigurable computing, device modeling and simulation, flexible and bio- compatible integration of nano- electronics and piezoelectric materials for MEMS devices Nano Science and Nanotechnology, 1D, 0D nanostructures of ZnO, TiO2

Personal Information

Dr Satinder Kumar Sharma

Male
School of Computing and Electrical Engineering, Indian Institute of Technology Mandi Indian Institute of Technology Mandi, South Campus
Mandi, Himachal Pradesh, India - 175005


Experience

  • Professor

    School of Computing and Electrical Engineering

    Indian Institute of Technology Mandi

  • Visiting Faculty

    Centre for Nanoscience and Nanotechnology

    University of Stuttgart, Stuttgart, Germany

  • Assistant Professor

    School of Computing and Electrical Engineering

    Indian Institute of Technology Mandi

  • Assistant Professor

    Department of Electronics and Communication Engineering

    Indian Institute of Information Technology, Allahabad

  • Research Scientist

    Department of Electrical Engineering

    Indian Institute of Technology Kanpur


Qualification

  • Post Doctoral

    Indian Institute of Technology, Kanpur

  • Doctor of Philosophy

    Kurukshetra University


Doctoral Theses Guided

2018

Graphene and Derivatives based Scaled Electronic and Memory Devices for Next Generation Technology

Dr. Mahesh Soni, Indian Institute of Technology, Mandi

2017

Alternate High-κ Dielectrics for Next-Generation CMOS Logic and Memory Technology

Dr. Robin Khosla, Indian Institute of Technology, Mandi

2018

Graphene and Derivatives based Scaled Electronic and Memory Devices for Next Generation Technology

Dr. Mahesh Soni, Indian Institute of Technology, Mandi

2017

Alternate High-κ Dielectrics for Next-Generation CMOS Logic and Memory Technology

Dr. Robin Khosla, Indian Institute of Technology, Mandi

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Research Projects

Low-Temperature Epitaxial Growth of High Mobility "Ge1-xSnx" Channel Materialfor "Pt/TiN/high- k/GeOXNY/Ge1-XSnX/ Ge/Si" Transistor to the Integration of Next Generation CMOS and Optoelectronics Devices on Cost Effective Si Platform

Funding Agency : Department of Science and Technology (DST) Govt. of India, New Delhi & German Academic Exchange Service (DAAD), Germany

Design and fabrication of an interface ASIC for a vibratory gyroscope sensor application

Funding Agency : Indian Space & Research Organization (ISRO),Dept. of Space, Govt. of India, Inertial Systems Unit (IISU), Vattiyoorkaavu, Thiruvananthapuram, 695013

Special Manpower Development Programme for Chips to System Design (SMDP),

Funding Agency : Department of Electronics & Information Technology 6, CGO Complex, New Delhi -110 003

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Low-Temperature Epitaxial Growth of High Mobility "Ge1-xSnx" Channel Materialfor "Pt/TiN/high- k/GeOXNY/Ge1-XSnX/ Ge/Si" Transistor to the Integration of Next Generation CMOS and Optoelectronics Devices on Cost Effective Si Platform

Funding Agency : Department of Science and Technology (DST) Govt. of India, New Delhi & German Academic Exchange Service (DAAD), Germany

Design and fabrication of an interface ASIC for a vibratory gyroscope sensor application

Funding Agency : Indian Space & Research Organization (ISRO),Dept. of Space, Govt. of India, Inertial Systems Unit (IISU), Vattiyoorkaavu, Thiruvananthapuram, 695013

Special Manpower Development Programme for Chips to System Design (SMDP),

Funding Agency : Department of Electronics & Information Technology 6, CGO Complex, New Delhi -110 003

Photo Catalytic treatment of wastewater for removal of AZO dyes; using rGO-TiO2 based cost effective composite technology

Funding Agency : Himachal Pradesh Sate Council for Science ,Technology Enviroment (HIMCOST), Shimla

Technology System Development Program (TSDP)

Funding Agency : Department of Science & Technology (DST), Govt. of India, New Delhi

Indigenous Photoresists Technology for Semiconductor Industries: Impact on Indian Economy, Skilled Manpower Development and Employment Possibility Uchhatar Avishkar Yojana (UAY) scheme

Funding Agency : Ministry of Human Resource Development (MHRD), Govt. of India, New Delhi

Radiation Impact on SiC based Devices for Space Applications

Funding Agency : Indian Institute of Technology (IIT) - Mandi (Himachal Pradesh)-175001 (Under Seed Grant Program)

Non Chemically Amplified Resists for EUVL at the 10 m Node and Beyond

Funding Agency : Intel, Semiconductor Research Corporation, 1101 Slater Road, Brighton Hall, Suite 120, Durham, NC 27703, P.O. Box 12053, Research Triangle Park, NC-27709-2053

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Patents



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